CHClF2 gas mixtures to activate all-sputtered CdS/CdTe solar cells

被引:7
作者
Camacho-Espinosa, E. [1 ]
Rejon, V. [1 ]
Hernandez-Rodriguez, E. [3 ]
Mis-Fernandez, R. [1 ]
Oliva, A. I. [1 ]
Rosendo, E. [2 ]
Rimmaudo, I. [1 ]
Pena, J. L. [1 ]
机构
[1] Ctr Investigac Estudios Avanzados, IPN Unidad Merida, Dept Fis Aplicada, Km 6,Antigua Carretera Progreso,AP 73-Cordemex, Merida 97310, Mexico
[2] Ctr Investigat Dispositivos Semicond, BUAP, 14 Ave San Claudio,CU Edificio 103-C,CP, Puebla 72570, Mexico
[3] Univ Guanajuato, DICIS, Dept Engn, Carretera Salamanca Valle Santiago Km 3-5 1-8, Salamanca 36885, Mexico
关键词
Sputtering technique; CdS/CdTe; Solar cells; Activation; Ar-O-2-CHClF2; CDTE THIN-FILMS; HIGH-EFFICIENCY; CDCL2; TREATMENT; RECRYSTALLIZATION; STEP;
D O I
10.1016/j.solener.2017.01.048
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Solar cell production process entirely based on sputtering deposition is considered the most suitable for industrial applications. Based-CdTe solar cells need activation treatment usually performed by CdCl2 saturated solution bath followed by high temperature annealing. Liquid, flammable and toxic reagents need special care in industrial processes. In this work, alternative activation treatments based on controlled gaseous atmospheres with Ar-O-2-CHClF2 and Air-CHCl2 for all-sputtered CdTe solar cells were studied. Finished devices were compared to cells activated by CdCl2 saturated solution. The all-sputtered (glass/ITO/ZnO/CdS/CdTe) structures were characterized before and after the activation processes by X-ray diffraction and field emission scanning electron-microscopy. Solar cells were characterized by external quantum efficiency and current density-voltage curves. An efficiency of 11% was achieved for the solar cell activated with Ar-O-2-CHClF2 gas mixture, achieving values of V-oc= 0.797 V and J(sc) = 25.4 mA/ cm(2). The quantum efficiency was around 90% in the 580-830 nm range. (C) 2017 Elsevier Ltd. All rights reserved.
引用
收藏
页码:729 / 734
页数:6
相关论文
共 46 条
[1]  
Adachi S., 2009, Properties of Semiconductor Alloys: Group-IV, III-V and II-VI Semiconductors
[2]   The effect of oxygen on interface microstructure evolution in the CdS/CdTe solar cells [J].
Albin, DS ;
Yan, Y ;
Al-Jassim, MM .
PROGRESS IN PHOTOVOLTAICS, 2002, 10 (05) :309-322
[3]  
[Anonymous], RES SOC S P
[4]  
Barrett C.S., 1980, STRUCTURE METALS
[5]   High efficiency, magnetron sputtered CdS/CdTe solar cells [J].
Compaan, AD ;
Gupta, A ;
Lee, SY ;
Wang, SL ;
Drayton, J .
SOLAR ENERGY, 2004, 77 (06) :815-822
[6]  
Cullity B. D., ELEMENTS XRAY DIFFRA
[7]   Activation of CdTe-based thin films with zinc chloride and tetrachlorozincates [J].
Drost, C. ;
Siepchen, B. ;
Krishnakumar, V. ;
Spaeth, B. ;
Kraft, C. ;
Modes, T. ;
Zywitzki, O. .
THIN SOLID FILMS, 2015, 582 :100-104
[8]  
Ferekides C.S., 2006, NDJ230630 NREL
[9]   Structural, morphological, optical and electrical properties of CdTe films deposited by CSS under an argon-oxygen mixture and vacuum [J].
Flores Mendoza, M. A. ;
Castanedo Perez, R. ;
Torres Delgado, G. ;
Marquez Marin, J. ;
Cruz Orea, A. ;
Zelaya Angel, O. .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2011, 95 (08) :2023-2027
[10]  
Fultz B., 2002, Transmission electron microscopy and diffractometry of materials, P123