Third order mode optically pumped semiconductor laser for an integrated twin photon source in quantum optics

被引：0

作者：

Semaltianos, NG ^{[1
]}

De Rossi, A ^{[1
]}

Berger, V ^{[1
]}

Vinter, B ^{[1
]}

Chirlias, E ^{[1
]}

Ortiz, V ^{[1
]}

机构：

[1] Thales Res & Technol, F-91404 Orsay, France

来源：

PROGRESS IN SEMICONDUCTOR MATERIALS FOR OPTOELECTRONIC APPLICATIONS | 2002年 / 692卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Lasing action on a third order waveguide mode is demonstrated at room temperature under optical pumping, in a specifically designed quantum well laser structure. The AlGaAs heterostructure involves barriers which ensure that the third order mode has a higher overlap with the single quantum well emitter than the fundamental mode. Third order mode operation of a laser structure opens the way to modal phase matched parametric down conversion inside the semiconductor laser itself. It is a first step towards the realization of semiconductor twin photon laser sources, needed for quantum information experiments.

引用

页码：531 / 536

页数：6

共 45 条

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