Third order mode optically pumped semiconductor laser for an integrated twin photon source in quantum optics

被引：0
|
作者：
Semaltianos, NG [1 ]
De Rossi, A [1 ]
Berger, V [1 ]
Vinter, B [1 ]
Chirlias, E [1 ]
Ortiz, V [1 ]
机构：
[1] Thales Res & Technol, F-91404 Orsay, France
来源：
PROGRESS IN SEMICONDUCTOR MATERIALS FOR OPTOELECTRONIC APPLICATIONS | 2002年 / 692卷
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Lasing action on a third order waveguide mode is demonstrated at room temperature under optical pumping, in a specifically designed quantum well laser structure. The AlGaAs heterostructure involves barriers which ensure that the third order mode has a higher overlap with the single quantum well emitter than the fundamental mode. Third order mode operation of a laser structure opens the way to modal phase matched parametric down conversion inside the semiconductor laser itself. It is a first step towards the realization of semiconductor twin photon laser sources, needed for quantum information experiments.
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页码：531 / 536
页数：6
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