Fabrication of amorphous silicon carbide films using VHF-PECVD for triple junction thin-film solar cell applications

被引：58

作者：

Yunaz, Ihsanul Afdi ^{[1
]}

Hashizume, Kenji ^{[2
]}

Miyajima, Shinsuke ^{[1
]}

Yamada, Akira ^{[3
]}

Konagai, Makoto ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan

[2] Tokyo Inst Technol, Dept Elect & Elect Engn, Meguro Ku, Tokyo 1528552, Japan

[3] Tokyo Inst Technol, Quantum Nanoelect Res Ctr, Meguro Ku, Tokyo 1528552, Japan

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2009年 / 93卷 / 6-7期

关键词：

Amorphous silicon carbide; VHF-PECVD; Monomethyl silane; Solar cell; Light stability; MICROCRYSTALLINE SILICON; SIC-H; DILUTION; ALLOYS;

D O I：

10.1016/j.solmat.2008.11.048

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Preparation of intrinsic hydrogenated amorphous silicon carbide (i-a-SiC:H) thin films for use as a top cell of triple junction solar cells is presented. These films were deposited using very-high-frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) technique with monomethyl silane (MMS) gas as the carbon source. Deposition conditions were explored to obtain films with a wide gap and low defect density. It was confirmed that the hydrogen dilution ratio plays an important role in enhancing the film properties. Employing a-SiC:H film as an intrinsic layer of single junction cell, open-circuit voltage as high as 0.99V has been achieved. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：1056 / 1061

页数：6

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