Strong enhancement of THz radiation intensity from semi-insulating GaAs surfaces at high temperatures

被引：43

作者：

Nakajima, M ^{[1
]}

Takahashi, M ^{[1
]}

Hangyo, M ^{[1
]}

机构：

[1] Osaka Univ, Res Ctr Superconductor Photon, Suita, Osaka 5650871, Japan

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 08期

关键词：

D O I：

10.1063/1.1499755

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The temperature dependence of THz radiation from semi-insulating GaAs surfaces excited by ultrashort laser pulses has been studied above room temperature up to 900 K. It is found that the radiation power increases with an increase in temperature and has a peak at similar to500 K, and then decreases with a further increase in temperature. The power radiated at 500 K is more than 30 times stronger than that at room temperature. The enhancement mechanism is discussed in relation to the temperature dependence of the built-in surface electric field. (C) 2002 American Institute of Physics.

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页码：1462 / 1464

页数：3

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