3.77-5.05-μm tunable solid-state lasers based on Fe2+-doped ZnSe crystals operating at low and room temperatures

被引:205
作者
Fedorov, Vladimir V. [1 ]
Mirov, Sergey B.
Gallian, Andrew
Badikov, Dmitri V.
Frolov, Mikhail P.
Korostelin, Yuri V.
Kozlovsky, Vladimir I.
Landman, Alexander I.
Podmar'kov, Yuri P.
Akimov, Vadim A.
Voronov, Artem A.
机构
[1] Univ Alabama Birmingham, Dept Phys, Ctr Opt Sensors & Spectroscopies, Birmingham, AL 35294 USA
[2] Kuban State Univ, Phys & Technol Dept, Krasnodar 350040, Russia
[3] Russian Acad Sci, PN Lebedev Phys Inst, Moscow 119991, Russia
[4] Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Russia
基金
美国国家科学基金会;
关键词
mid-infrared (Mid-IR) lasers; transition metal lasers; tunable solid-state lasers;
D O I
10.1109/JQE.2006.880119
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Spectroscopic properties and lasing of Fe:ZnSe and co-doped Fe:Cr:ZnSe crystals in the mid-infrared spectral range were studied at room and low temperatures. Using a free-running Er:YAG laser as a pump source, the output energy of the thermoelectrically cooled Fe:ZnSe laser was 142 mJ with 30% slope efficiency at T = 220 K. Passive Q-switched oscillation of Er:YAG laser with Fe:ZnSe crystal was demonstrated and used as a pump source for a Fe:ZnSe laser system. Room-temperature (RT) gain-switched lasing of Fe:ZnSe was achieved in microchip and selective cavity configurations using Q-switched Er:YAG and Raman-shifted Nd:YAG lasers as pump sources. The microchip laser threshold of 100 mJ/cm(2) was demonstrated using a Fe:ZnSe crystal without any reflection coatings. A slope efficiency of 13%, oscillation threshold of 1.3 mJ, and tunable oscillation of Fe:ZnSe laser systems over 3.95-5.05 mu m spectral range were realized at RT.
引用
收藏
页码:907 / 917
页数:11
相关论文
共 38 条
[1]   4.0-4.5-μm lasing of Fe:ZnSe below 180 K, a new mid-infrared laser material [J].
Adams, JJ ;
Bibeau, C ;
Page, RH ;
Krol, DM ;
Furu, LH ;
Payne, SA .
OPTICS LETTERS, 1999, 24 (23) :1720-1722
[2]   Vapour growth of II-VI single crystals doped by transition metals for mid-infrared lasers [J].
Akimov, VA ;
Frolov, MP ;
Korostelin, YV ;
Kozlovsky, VI ;
Landman, AI ;
Podmar'kov, YP ;
Voronov, AA .
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 4, 2006, 3 (04) :1213-+
[3]  
Akimov VA, 2004, QUANTUM ELECTRON+, V34, P912, DOI [10.1070/QE2004v034n10ABEH002789, 10.1070/QE2004v034no10ABEH002789]
[4]  
Bagdasarov Kh. S., 1980, Soviet Journal of Quantum Electronics, V10, DOI 10.1070/QE1980v010n09ABEH010665
[5]  
Bagdasarov Kh. S., 1978, Soviet Journal of Quantum Electronics, V8, P83, DOI 10.1070/QE1978v008n01ABEH008418
[6]   Transition metal-doped zinc chalcogenides: Spectroscopy and laser demonstration of a new class of gain media [J].
Deloach, LD ;
Page, RH ;
Wilke, GD ;
Payne, SA ;
Krupke, WF .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1996, 32 (06) :885-895
[7]   Synthesis and characterization of diffusion-doped Cr2+:ZnSe and Fe2+:ZnSe [J].
Demirbas, U ;
Sennaroglu, A ;
Somer, M .
OPTICAL MATERIALS, 2006, 28 (03) :231-240
[8]  
GALLIAN A, 2005, ADV SOLID STATE PHOT
[9]  
GREBE G, 1974, Z NATURFORSCH A, VA 29, P1803
[10]  
GREBE G, 1993, Z PHYS B, V91, P429