Optical second-harmonic generation spectroscopy on Si(111)7x7

被引：37

作者：

Pedersen, K ^{[1
]}

Morgen, P ^{[1
]}

机构：

[1] ODENSE UNIV,DEPT PHYS,DK-5230 ODENSE M,DENMARK

来源：

SURFACE SCIENCE | 1997年 / 377卷 / 1-3期

关键词：

second-harmonic generation; Si(111);

D O I：

10.1016/S0039-6028(96)01410-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Optical second-harmonic generation from Si(111)7 x 7 has been measured as a function of pump photon energy in the range from 1.0 to 1.8 eV with three different combinations of incident and detected polarization directions. By representing the data by anharmonic oscillator models, resonances are found around 1.3 and 3.4 eV, and just below the limit of the spectra (0.8 eV). The 1.3-eV peak is ascribed to resonant transitions between rest atom and adatom states while the 3.4-eV resonance is the so-called strain resonance. The origin of the peak at 0.8 eV still needs to be investigated.

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页码：393 / 397

页数：5

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