Concentration quenching of the luminescence from trivalent thulium, terbium, and erbium ions embedded in an AlN matrix

被引：11

作者：

Benz, Felix ^{[1
]}

Gonser, Andreas ^{[1
]}

Volker, Reinhart ^{[2
]}

Walther, Thomas ^{[3
]}

Mosebach, Jan-Thomas ^{[1
]}

Schwanda, Bianka ^{[1
]}

Mayer, Nicolas ^{[1
]}

Richter, Gunther ^{[2
]}

Strunk, Horst P. ^{[1
]}

机构：

[1] Univ Stuttgart, Inst Mat Sci, D-70569 Stuttgart, Germany

[2] Max Planck Inst Intelligent Syst, D-70569 Stuttgart, Germany

[3] Univ Sheffield, Dept Elect & Elect Engn, Kroto Ctr High Resolut Imaging & Spect, Sheffield S1 3JD, S Yorkshire, England

来源：

JOURNAL OF LUMINESCENCE | 2014年 / 145卷

关键词：

Luminescence; Concentration quenching; Terbium; Erbium; Thulium; Aluminium nitride; ER; PHOTOLUMINESCENCE;

D O I：

10.1016/j.jlumin.2013.09.014

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The concentration quenching behaviour of erbium, terbium, and thulium ions embedded in sputter deposited AlN films was investigated. For each of these three systems a series of specimens with different ion concentrations was prepared. In all three cases the concentration for maximum of the luminescence intensity (optimum concentration) at the selected excitation parameters was determined. These optimum concentrations differ strongly for the different ions. A rate equation model based on transition probabilities can explain the observations. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：855 / 858

页数：4

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