Self-powered solar-blind ZnGa2O4 UV photodetector with ultra-fast response speed

被引：60

作者：

Han, Dongyang ^{[1
,2
]}

Liu, Kewei ^{[1
,2
]}

Hou, Qichao ^{[1
,2
]}

Chen, Xing ^{[1
,2
]}

Yang, Jialin ^{[1
]}

Li, Binghui ^{[1
]}

Zhang, Zhenzhong ^{[1
,2
]}

Liu, Lei ^{[1
,2
]}

Shen, Dezhen ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, Changchun 130033, Peoples R China

[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 2020年 / 315卷

基金：

中国国家自然科学基金;

关键词：

ZnGa2O4; Self-powered; Solar-blind photodetector; Ultra-fast response speed; Asymmetric electrode; DEEP-ULTRAVIOLET PHOTODETECTOR; FABRICATION; FILMS; PAIR;

D O I：

10.1016/j.sna.2020.112354

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel self-powered solar-blind ZnGa2O4 ultraviolet (UV) photodetector has been constructed by fab-ricating asymmetric pairs of Au Schottky electrodes on the ZnGa2O4 film. The current-voltage curve of the device exhibits an obvious rectifying characteristic with a rectification ratio of 11.3 at +/- 8 V. At 0 V bias, the peak responsivity of our device at 246 nm is about 22.2 mA/W with an UV-vis rejection ratio of 1.3x10(4), indicating the excellent self-powered solar-blind UV photodetector performance. More interestingly, the rise time and decay time of the device are only 10 ns and 30 ns, respectively, which are much faster than that of any other previously reported self-powered solar-blind UV photodetectors to the best of our knowledge. The ultra-fast response speed of the device should be attributed to the asymmetric Schottky junctions and the high crystalline quality of our ZnGa2O4 film with low trap density. Our work provides a new method to constructing high-performance self-powered solar-blind UV photodetectors. (C) 2020 Elsevier B.V. All rights reserved.

引用

页数：7

共 53 条

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