Cycle of charge carrier states with formation and extinction of a floating gate in an ambipolar tetracyanoquaterthienoquinoid-based field-effect transistor

被引：1

作者：

Itoh, Takuro ^{[1
]}

Toyota, Taro ^{[1
]}

Higuchi, Hiroyuki ^{[2
]}

Matsushita, Michio M. ^{[3
]}

Suzuki, Kentaro ^{[4
]}

Sugawara, Tadashi ^{[4
]}

机构：

[1] Univ Tokyo, Grad Sch Arts & Sci, Dept Basic Sci, 3-8-1 Komaba, Tokyo 1538902, Japan

[2] Toyama Univ, Fac Sci, Dept Chem, 3190 Gofuku, Toyama, Toyama 9308555, Japan

[3] Nagoya Univ, Grad Sch Sci, Dept Chem, Aichi 4648602, Japan

[4] Kanagawa Univ, Fac Sci, Dept Chem, 2946 Tsuchiya, Hiratsuka, Kanagawa 2591293, Japan

来源：

CHEMICAL PHYSICS LETTERS | 2017年 / 671卷

关键词：

Organic field effect transistor; Ambipolar transfer characteristics; Charge carrier trapping; Bias stress effect; Molecule-based floating gate; Decay kinetics of source-drain current; THIN-FILM TRANSISTORS; THRESHOLD VOLTAGE SHIFT; HEAD-TO-HEAD; CRYSTALLINE ENVIRONMENT; TRANSPORT; CHANNEL; TERTHIOPHENE; ARYLNITRENES; PERFORMANCE; MOLECULES;

D O I：

10.1016/j.cplett.2017.01.018

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A tetracyanoquaterthienoquinoid (TCT(4)Q)-based field effect transistor is characterized by the ambipolar transfer characteristics and the facile shift of the threshold voltage induced by the bias stress. The trapping and detrapping kinetics of charge carriers was investigated in detail by the temperature dependence of the decay of source-drain current (I-sD). We found a repeatable formation of a molecular floating gate is derived from a 'charge carrier-and-gate' cycle comprising four stages, trapping of mobile carriers, formation of a floating gate, induction of oppositely charged mobile carriers, and recombination between mobile and trapped carriers to restore the initial state. (C) 2017 Elsevier B.V. All rights reserved.

引用

页码：71 / 77

页数：7

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