Attenuated Oscillation of the Tunneling Magnetoresistance in a Ferromagnet-Metal-Insulator-Ferromagnet Tunneling Junction

被引：6

作者：

Chen, Sui-Pin ^{[1
]}

Chang, Ching-Ray ^{[2
]}

机构：

[1] Natl Chiayi Univ, Dept Appl Phys, Chiayi 60004, Taiwan

[2] Natl Taiwan Univ, Dept Phys, Taipei 10617, Taiwan

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2009年 / 45卷 / 06期

关键词：

Coherence tunneling; planar tunneling junction; resonant tunneling; tunneling magnetoresistance;

D O I：

10.1109/TMAG.2009.2018591

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The tunneling magnetoresistance (TMR) ratio is investigated in a ferromagnet-metal-insulator-ferromagnet planar tunneling junction by use of the spin-polarized free-electron model. Due to the coherence multiple reflective scatterings within the metallic layer, the TMR ratio oscillates as the metallic thickness increases. Due to the same scatterings; not only electrons with the out-of-plane energy E-xi close to the Fermi energy E-F but also electrons with E-xi below E-F can tunnel sufficiently through the tunneling junction, which leads to the attenuated oscillation of the TMR ratio.

引用

页码：2410 / 2412

页数：3

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