Colossal anisotropic resistivity and oriented magnetic domains in strained La0.325Pr0.3Ca0.375MnO3 films

被引：10

作者：

Jiang, Tao ^{[1
]}

Yang, Shengwei ^{[1
]}

Zhou, Haibiao ^{[1
,2
,3
]}

Liu, Yukuai ^{[1
]}

Zhao, Wenbo ^{[1
]}

Feng, Lei ^{[1
]}

Hou, Yubin ^{[2
,3
]}

Lu, Qingyou ^{[1
,2
,3
]}

Li, Xiaoguang ^{[1
]}

机构：

[1] Univ Sci & Technol China, Dept Phys, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Peoples R China

[2] Chinese Acad Sci, High Field Magnet Lab, Hefei 230031, Peoples R China

[3] Univ Sci & Technol China, Hefei 230031, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 20期

基金：

中国国家自然科学基金;

关键词：

ELECTRONIC PHASE; MANGANITE;

D O I：

10.1063/1.4878557

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Magnetic and resistive anisotropies have been studied for the La0.325Pr0.3Ca0.375MnO3 films with different thicknesses grown on low symmetric (011)-oriented (LaAlO3)(0.3)(SrAl0.5Ta0.5O3)(0.7) substrates. In the magnetic and electronic phase separation region, a colossal anisotropic resistivity (AR) of similar to 10(5) % and an anomalous large anisotropic magnetoresistance can be observed for 30 nm film. However, for 120 nm film, the maximum AR decreases significantly (similar to 2 x 10(3) %) due to strain relaxation. The colossal AR is strongly associated with the oriented formation of magnetic domains, and the features of the strain effects are believed to be useful for the design of artificial materials and devices. (C) 2014 AIP Publishing LLC.

引用

页数：5

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