Leakage current effects on C-V plots of high-k metal-oxide-semiconductor capacitors

被引：23

作者：

Lu, Y. ^{[1
]}

Hall, S. ^{[1
]}

Tan, L. Z. ^{[1
]}

Mitrovic, I. Z. ^{[1
]}

Davey, W. M. ^{[1
]}

Raeissi, B. ^{[2
]}

Engstrom, O. ^{[2
]}

Cherkaoui, K. ^{[3
]}

Monaghan, S. ^{[3
]}

Hurley, P. K. ^{[3
]}

Gottlob, H. D. B. ^{[4
]}

Lemme, M. C. ^{[4
]}

机构：

[1] Univ Liverpool, Dept Elect Engn & Elect, Liverpool L69 3GJ, Merseyside, England

[2] Chalmers, Dept Microtecimol & Nanosci, SE-41296 Gothenburg, Sweden

[3] Natl Univ Ireland Univ Coll Cork, Tyndall Natl Inst, Cork, Ireland

[4] AMO GmbH, Adv Microelect Ctr Aachen AMICA, D-52074 Aachen, Germany

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2009年 / 27卷 / 01期

基金：

英国工程与自然科学研究理事会;

关键词：

GATE DIELECTRICS; VOLTAGE CHARACTERIZATION; MODEL;

D O I：

10.1116/1.3025910

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

With the employment of ultrathin, high dielectric constant gate materials in advanced semiconductor technology, the conventional capacitance-voltage measurement technique exhibits a series of anomalies. In particular, a nonsaturating increase in the accumulation capacitance with reducing measurement frequency is frequently observed, which has not been adequately explained to our knowledge. In this article, the authors provide an explanation for this anomaly and hence set a criterion for the lower bound on measurement frequency. We then present a model which allows the easy extraction of the required parameters and apply it to an experimental set of data. (C) 2009 American Vacuum Society. [DOI: 10.1116/1.3025910]

引用

页码：352 / 355

页数：4

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