Linear Rashba Model of a Hydrogenic Donor Impurity in GaAs/GaAlAs Quantum Wells

被引：23
|
作者：
Li, Shu-Shen [1 ]
Xia, Jian-Bai [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
来源：
NANOSCALE RESEARCH LETTERS | 2009年 / 4卷 / 02期
基金：
中国国家自然科学基金;
关键词：
ENERGY-SPECTRA; STATES;
D O I：
10.1007/s11671-008-9222-5
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The Rashba spin-orbit splitting of a hydrogenic donor impurity in GaAs/GaAlAs quantum wells is investigated theoretically in the framework of effective-mass envelope function theory. The Rashba effect near the interface between GaAs and GaAlAs is assumed to be a linear relation with the distance from the quantum well side. We find that the splitting energy of the excited state is larger and less dependent on the position of the impurity than that of the ground state. Our results are useful for the application of Rashba spin-orbit coupling to photoelectric devices.
引用
收藏
页码：178 / 180
页数：3
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