An audio amplifier providing up to 1 Watt in standard digital 90-nm CMOS

被引：14

作者：

Becker, Rolf ^{[1
]}

Groeneweg, Willem H. ^{[1
]}

机构：

[1] Philips Semicond Zurich, CH-8045 Zurich, Switzerland

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2006年 / 41卷 / 07期

关键词：

audio amplifier; cellular phones; class AB amplifier; efficiency; portable equipment; 90-nm CMOS;

D O I：

10.1109/JSSC.2006.873674

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An audio amplifier in a standard 910-nm dual gateoxide CMOS technology is designed for direct connection to the battery in a mobile phone. Special techniques have been applied to run it from a supply voltage of up to 5.5 V. The circuit does not require a dedicated supply voltage generator; it can be integrated on the same chip with the digital signal processor, and provides high output power, good power supply rejection, and good efficiency.

引用

页码：1648 / 1653

页数：6

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