Effect of defects on room-temperature ferromagnetism of Cr-doped ZnO films

被引：68
作者：
Zhuge, L. J. [1 ,2 ]
Wu, X. M. [1 ,3 ]
Vvu, Z. F. [1 ,3 ]
Chen, X. M. [1 ,3 ]
Meng, Y. D. [4 ]
机构：
[1] Suzhou Univ, Key Lab Thin Films Jiangsu, Suzhou 215006, Peoples R China
[2] Suzhou Univ, Anal & Testing Ctr, Suzhou 215123, Peoples R China
[3] Suzhou Univ, Dept Phys, Suzhou 215123, Peoples R China
[4] Chinese Acad Sci, Inst Plasma Phys, Hefei 230031, Peoples R China
来源：
SCRIPTA MATERIALIA | 2009年 / 60卷 / 04期
基金：
中国国家自然科学基金;
关键词：
ZnO; Cr doping; Magnetic properties; Microstructure; MAGNETIC SEMICONDUCTORS; ORIGIN; TIO2;
D O I：
10.1016/j.scriptamat.2008.10.002
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We have investigated the microstructure and the magnetic properties of Zn1-xCrxO thin films deposited on squartz glass substrates using radiofrequency magnetron Sputtering. The structural investigations demonstrate that the ferromagnetism observed at room temperature is an intrinsic property of Cr-ZnO films, and does not originate from any secondary phase. The experimental results show that defects due to singly negatively charged Zn vacancies, together with Cr doping, plays an important role in the ferromagnetic origin of Zn1-xCrxO thin films. (C) 2008 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码：214 / 217
页数：4
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