Progress of (Sr, Ba) TiO3 ferroelectric thin film and tunability

被引：0

作者：

Fu, XH ^{[1
]}

Shan, LW

Ding, BY

Hou, WP

Zhou, F

Fu, ZY

机构：

[1] Jinan Univ, Dept Mat Sci & Engn, Jinan 250022, Peoples R China

[2] Wuhan Univ Technol, State Key Lab Mat Composite & Adv Technol, Wuhan 430070, Peoples R China

来源：

BULLETIN OF MATERIALS SCIENCE | 2004年 / 27卷 / 05期

关键词：

(Sr; Ba); TiO3; ferroelectric thin films; sol-gel; tunability; dielectric loss;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The fabrication method, technology route and structure performances of (Sr, Ba) TiO3 (SBT) ferroelectric thin film have been summarized in this paper. The tunability of dielectric constant, dielectric loss and leakage current are the basic parameters of tunable microwave devices. The thin films of SBT with high properties could be fabricated by means of RF magnetron sputtering and sol-gel processing. The electrical performances of thin film material can be improved largely by dopants. Some problems are put forward to pay attention to this material research process.

引用

页码：433 / 439

页数：7

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