Inversion of microscopic lock-in thermograms in the presence of emissivity contrast

被引:7
作者
Breitenstein, O.
Altmann, F.
机构
[1] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany
[2] Fraunhofer Inst Mech Mat, D-06120 Halle, Germany
关键词
lock-in thermography; emissivity; image inversion; deconvolution; electronic devices;
D O I
10.1016/j.ndteint.2006.02.003
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
None of the conventionally displayed images of lock-in thermography (in-phase or 0 degrees image, out of phase or -90 degrees image, amplitude image, phase image) is able to become inverted in the presence of emissivity contrast. The phase signal is inherently emissivity-corrected, but here contributions of different heat sources superimpose very nonlinearly, which prevents any meaningful deconvolution. It is shown that the "0 degrees/-90 degrees" image, as an alternative kind of representation of lock-in thermography images, being also inherently emissivity-corrected, is able to be inverted for obtaining, e.g. the lateral power distribution in an electronic device. Blackening the surface by colloidal bismuth also may remove the emissivity contrast. (C) 2006 Elsevier Ltd. All rights reserved.
引用
收藏
页码:636 / 640
页数:5
相关论文
共 8 条
[1]  
[Anonymous], THEORY PRACTICE INFR
[2]  
BREITENSTEIN O, 2003, LOCK IN THERMOGRAPHY
[3]  
Breitenstein O., 2004, QUANTITATIVE INFRARE, V1, P151
[4]  
Carslaw H. S., 1959, CONDUCTION HEAT SOLI
[5]   Backside hot spot detection using Liquid Crystal Microscopy [J].
Crepel, O ;
Beaudoin, F ;
de Morais, LD ;
Haller, G ;
Goupil, C ;
Perdu, P ;
Desplats, R ;
Lewis, D .
MICROELECTRONICS RELIABILITY, 2002, 42 (9-11) :1741-1746
[6]   Preparation of nonconducting infrared-absorbing thin films [J].
Gradhand, M ;
Breitenstein, O .
REVIEW OF SCIENTIFIC INSTRUMENTS, 2005, 76 (05)
[7]   MICROSCOPIC FLUORESCENT IMAGING OF SURFACE-TEMPERATURE PROFILES WITH 0.01-DEGREES-C RESOLUTION [J].
KOLODNER, P ;
TYSON, JA .
APPLIED PHYSICS LETTERS, 1982, 40 (09) :782-784
[8]   Process technologies for high-resolution infrared detectors based on LiTaO3 [J].
Norkus, V ;
Gerlach, G ;
Hofmann, G .
DEVICE AND PROCESS TECHNOLOGIES FOR MEMS AND MICROELECTRONICS, 1999, 3892 :233-240