Threshold voltage model of junctionless cylindrical surrounding gate MOSFETs including fringing field effects

被引：20
作者：
Gupta, Santosh Kumar [1 ]
机构：
[1] Motilal Nehru Natl Inst Technol, Dept Elect & Commun Engn, Allahabad 211004, Uttar Pradesh, India
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2015年 / 88卷
关键词：
Junctionless (JL) MOSFET; Fringing fields; Threshold voltage; Cylindrical surrounding gate (CSG); Evanescent mode analysis (EMA); CAPACITANCE;
D O I：
10.1016/j.spmi.2015.09.001
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
2D Analytical model of the body center potential (BCP) in short channel junctionless Cylindrical Surrounding Gate (JLCSG) MOSFETs is developed using evanescent mode analysis (EMA). This model also incorporates the gate bias dependent inner and outer fringing capacitances due to the gate-source/drain fringing fields. The developed model provides results in good agreement with simulated results for variations of different physical parameters of JLCSG MOSFET viz, gate length, channel radius, doping concentration, and oxide thickness. Using the BCP, an analytical model for the threshold voltage has been derived and validated against results obtained from 3D device simulator. (C) 2015 Elsevier Ltd. All rights reserved.
引用
收藏
页码：188 / 197
页数：10
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