Effect of Oxygen Partial Pressure and Anneal Temperature on BaTiO3 Thin Film Crystal Structure

被引:0
作者
Zhang, Jing [1 ]
Sun, De-gui [1 ]
Fu, Xiuhua [1 ]
Liu, Dong-mei [1 ]
Pan, Yong-gang [1 ]
Yang, Fei [2 ]
机构
[1] Changchun Univ Sci & Technol, Changchun 130022, Jilin, Peoples R China
[2] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Beijing 100864, Peoples R China
来源
INTERNATIONAL SYMPOSIUM ON PHOTONICS AND OPTOELECTRONICS 2015 | 2015年 / 9656卷
关键词
BaTiO3; crystal film; crystalline quality; surface roughness; crystal structure; pulsed laser deposition; oxygen partial pressure; annealing temperature;
D O I
10.1117/12.2197568
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
BaTiO3 film is deposited on single crystal MgO substrate with pulsed laser deposition, and its crystal structure and surface roughness are characterized by X-ray diffraction instrument and atomic force microscope. BaTiO3 film crystal quality is analyzed under three different oxygen partial pressure and three different annealing temperatures. The result shows that when the oxygen partial pressure is 15Pa, crystal surface (001) and (002) diffraction peak of BaTiO3 thin films have higher intensity. It indicated that the film has a good c-axis orientation. When the annealing temperature is 800 degrees C, the intensity of diffraction peak is the maximum, and peak shape is sharper. BaTiO3 crystal film is obtained with highly preferred orientation, and film density is improved. Thus the film has less surface roughness and good crystalline state.
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页数:6
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