ELECTROMODULATION SPECTROSCOPY OF SEMICONDUCTOR NANOSTRUCTURES: III-NITRIDES AND DILUTE NITRIDES

被引：0

作者：

Kudrawiec, R. ^{[1
]}

机构：

[1] Wroclaw Univ Technol, Inst Phys, Wybrzeze Wyspianskiego 27, PL-50370 Wroclaw, Poland

来源：

PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES | 2009年

关键词：

CONDUCTION-BAND OFFSET; CONTACTLESS ELECTROREFLECTANCE SPECTROSCOPY; MODULATION SPECTROSCOPY; QUANTUM-WELLS; PHOTOREFLECTANCE SPECTROSCOPY; OPTICAL CHARACTERIZATION; PYROELECTRIC PROPERTIES;

D O I：

10.1142/9789814280365_0002

中图分类号：

O69 [应用化学];

学科分类号：

081704 ;

摘要：

Contactless electroreflectance (CER) spectroscopy was applied to study the selected semiconductor nanostructures from the III-nitride and dilute nitride family of semiconductor materials. In the case of III-nitrides, the built-in electric field in AlGaN/GaN heterostructures have been determined by measuring the AlGaN-related Franz-Keldysh oscillation and analyzing its period. In the case of dilute nitrides, the optical transitions between the ground and excited states have been clearly observed in CER spectra of GaInNAsSb/GaAs quantum wells. The conduction band offset for these quantum wells has been found by comparing experimental data with theoretical calculations.

引用

页码：11 / +

页数：3

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