Quantum-mechanical analytical Modeling of threshold voltage in long-channel double-gate MOSFET with symmetric and asymmetric gates

被引：0

作者：

Autran, JL ^{[1
]}

Munteanu, D ^{[1
]}

Tintori, O ^{[1
]}

Harrison, S ^{[1
]}

Decarre, E ^{[1
]}

Skotnicki, T ^{[1
]}

机构：

[1] CNRS, UMR 6137, L2MP, Bat IRPHE,49 Rue Joliot Curie, F-13384 Marseille, France

来源：

NSTI NANOTECH 2004, VOL 2, TECHNICAL PROCEEDINGS | 2004年

关键词：

analytical modeling; quantum effects; threshold voltage modeling; double-gate MOSFET;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A quantum-mechanical (QM) full analytical model of the threshold voltage (V-T) for long-channel double-gate (DG) MOSFETs has been developed. This approach is based on analytical solutions for the decoupled Schrodinger and Poisson equations solved in the silicon region. Using this original model, a detailed quantitative comparison between symmetric (SDG) and asymmetric (ASG) architectures has been performed in terms of V-T dependence with film thickness and doping level.

引用

页码：163 / 166

页数：4

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