Resistive switching in iron-oxide-filled carbon nanotubes

被引：16

作者：

Cava, Carlos E. ^{[1
,2
]}

Persson, Clas ^{[2
,3
]}

Zarbin, Aldo J. G. ^{[4
]}

Roman, Lucimara S. ^{[5
]}

机构：

[1] Univ Tecnol Fed Parana, Dept Mat Engn, BR-86036370 Londrina, PR, Brazil

[2] Royal Inst Technol, Dept Mat Sci & Engn, SE-10044 Stockholm, Sweden

[3] Univ Oslo, Dept Phys, NO-0316 Oslo, Norway

[4] Univ Fed Parana, Dept Chem, BR-81531990 Curitiba, Parana, Brazil

[5] Univ Fed Parana, Dept Phys, BR-81531990 Curitiba, Parana, Brazil

来源：

NANOSCALE | 2014年 / 6卷 / 01期

关键词：

RAMAN-SPECTROSCOPY; CHARGE-TRANSPORT; GRAPHENE; TRANSITION; CONDUCTION; SCATTERING; GRAPHITE; DISORDER; DEFECTS;

D O I：

10.1039/c3nr04320g

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Iron-oxide-filled carbon nanotubes exhibit an intriguing charge bipolarization behavior which allows the material to be applied in resistive memory devices. Raman analysis conducted with an electric field applied in situ shows the Kohn anomalies and a strong modification of the electronic properties related to the applied voltage intensity. In addition, the I-D/I-G ratio indicated the reversibility of this process. The electrical characterization indicated an electronic transport governed by two main kinds of charge hopping, one between the filling and the nanotube and the other between the nanotube shells.

引用

页码：378 / 384

页数：7

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