Room-temperature hydrogen sensor based on Pd-capped Mg2Ni thin film

被引：22

作者：

Yoshimura, K ^{[1
]}

Yamada, Y ^{[1
]}

Okada, M ^{[1
]}

Tazawa, M ^{[1
]}

Jin, P ^{[1
]}

机构：

[1] AIST, Inst Struct & Engn Mat, Moriyama Ku, Nagoya, Aichi 4638560, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2004年 / 43卷 / 4B期

关键词：

hydrogen sensor; Mg2Ni; palladium; thin film; resistance; XPS;

D O I：

10.1143/JJAP.43.L507

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Pd-capped Mg2Ni alloy thin films were prepared by DC magnetron sputtering using Mg, Ni and Pd targets, and their hydrogen sensing characteristics have been investigated. Pd-capped Mg2Ni films with thicknesses of 10 nm Pd and 40 nm Mg2Ni show a good hydrogen sensing property for hydrogen-containing air at room temperature. Their sensing range is from 0.01% to 10% hydrogen in air. These films are supposed to be candidates for low-cost room temperature hydrogen sensor.

引用

页码：L507 / L509

页数：3

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