Highly Stable Thin-Film Transistors Based on Indium Oxynitride Semiconductor

被引：16

作者：

Kim, Hyoung-Do ^{[1
]}

Kim, Jong Heon ^{[1
]}

Park, Kyung ^{[3
]}

Park, Yun Chang ^{[4
]}

Kim, Sunkook ^{[5
]}

Kim, Yong Joo ^{[2
]}

Park, Jozeph ^{[6
]}

Kim, Hyun-Suk ^{[1
]}

机构：

[1] Chungnam Natl Univ, Dept Mat Sci & Engn, Daejeon 34134, South Korea

[2] Chungnam Natl Univ, Biosyst Machinery Engn, Daejeon 34134, South Korea

[3] Yonsei Univ, Sch Integrated Technol, Incheon 21983, South Korea

[4] Natl Nano Fab Ctr, Daejeon 305806, South Korea

[5] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 16419, South Korea

[6] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Daejeon 34141, South Korea

来源：

ACS APPLIED MATERIALS & INTERFACES | 2018年 / 10卷 / 18期

基金：

新加坡国家研究基金会;

关键词：

Indium oxynitride (InON); thin-film transistor; negative bias illumination stress (NBIS); air stability; density functional theory (DFT); first principle calculation; STABILITY; NITRIDE; BIAS; INN;

D O I：

10.1021/acsami.8b02678

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this study, the properties of indium oxynitride (InON) semiconductor films grown by reactive radio frequency sputtering were examined both experimentally and theoretically. Also, thin-film transistors (TFTs) incorporating InON as the active layer were evaluated for the first time. It is found that InON films exhibit high stability upon prolonged exposure to air and the corresponding TFTs are more stable when subjected to negative bias illumination stress, compared to devices based on indium oxide (In2O3) or zinc oxynitride (ZnON) semiconductors. X-ray photoelectron spectroscopy analyses of the oxygen is peaks suggest that as nitrogen is incorporated into In2O3 to form InON, the relative fraction of oxygen-deficient regions decreases significantly, which is most likely to occur by having the valence band maximum shifted up. Density functional theory calculations indicate that the formation energy of InN is much lower than Zn3N2 , thus accounting for the higher stability InON compared to ZnON in air.

引用

页码：15873 / 15879

页数：7

共 27 条

[1] XAFS analysis of indium oxynitride thin films grown on silicon substrates [J].