Study of Nb/NbxSi1-x/Nb Josephson junction arrays

被引：5
作者：
Cao Wen-Hui [1 ]
Li Jin-Jin [1 ]
Zhong Yuan [1 ]
He Qing [1 ]
机构：
[1] Natl Inst Metrol, Beijing 100029, Peoples R China
来源：
CHINESE PHYSICS B | 2015年 / 24卷 / 12期
基金：
中国国家自然科学基金;
关键词：
Josephson junctions; critical current; voltage standard;
D O I：
10.1088/1674-1056/24/12/127402
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Owing to the adjustable characteristics and superior etching properties of co-sputtered NbxSi1-x film, we are trying to fabricate Nb/NbxSi1-x/Nb Josephson junction arrays for voltage standard. It is important to find the suitable NbxSi1-x barrier for the junctions. Josephson junctions with different barrier content are fabricated. Current-voltage characteristics are measured and analyzed. It is demonstrated in this paper that critical current can be adjusted by using different barrier content and thickness. Shapiro steps of five hundred junctions in series are observed.
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页数：4
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