Evaluation of subsurface damage in GaN substrate induced by mechanical polishing with diamond abrasives

被引：73

作者：

Aida, Hideo ^{[1
,2
]}

Takeda, Hidetoshi ^{[1
]}

Kim, Seong-Woo ^{[1
]}

Aota, Natsuko ^{[1
]}

Koyama, Koji ^{[1
]}

Yamazaki, Tsutomu ^{[2
]}

Doi, Toshiro ^{[2
]}

机构：

[1] Namiki Precis Jewel Co Ltd, NJC Inst Technol, Adachi Ku, Tokyo 1238511, Japan

[2] Kyushu Univ, KASTEC, Kasuga, Fukuoka 8168580, Japan

来源：

APPLIED SURFACE SCIENCE | 2014年 / 292卷

关键词：

GaN substrate; Mechanical polishing; Chemical mechanical polishing; Subsurface damage; Cathodoluminescence; Brittle materials; FUSED-SILICA PARTS; BULK; CRYSTAL; GROWTH; BLUE;

D O I：

10.1016/j.apsusc.2013.12.005

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The relationship between the depth of the subsurface damage (SSD) and the size of the diamond abrasive used for mechanical polishing (MP) of GaN substrates was investigated in detail. GaN is categorized as a hard, brittle material, and material removal in MP proceeds principally to the fracture of GaN crystals. Atomic force microscopy and cathodoluminescence imaging revealed that the mechanical processing generated surface scratches and SSD. The SSD depth reduced as the diamond abrasive size reduced. A comparison of the relationship between the SSD depth and the diamond abrasive size used in the MP of GaN with the same relationship for typical brittle materials such as glass substrates suggests that the MP of GaN substrates proceeds via the same mechanism as glass. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：531 / 536

页数：6

共 31 条

[1] Chemical Mechanical Polishing of Gallium Nitride with Colloidal Silica [J].

Aida, Hideo ;

Takeda, Hidetoshi ;

Koyama, Koji ;

Katakura, Haruji ;

Sunakawa, Kazuhiko ;

Doi, Toshiro .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2011, 158 (12) :H1206-H1212

[2] ROLE OF CRACKS, PORES, AND ABSORBING INCLUSIONS ON LASER-INDUCED DAMAGE THRESHOLD AT SURFACES OF TRANSPARENT DIELECTRICS [J].

BLOEMBERGEN, N .

APPLIED OPTICS, 1973, 12 (04) :661-664

[3]

Brown N. J., 1989, Proceedings of the 43rd Annual Symposium on Frequency Control 1989 (Cat. No.89CH2690-6), P611, DOI 10.1109/FREQ.1989.68922

[4] Mechanical properties characterization of c-plane (0001) and m-plane (10-10) GaN by nanoindentation examination [J].

Fujikane, Masaki ;

Inoue, Akira ;

Yokogawa, Toshiya ;

Nagao, Shijo ;

Nowak, Roman .

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8, 2010, 7 (7-8)

[5] Surface preparation of substrates from bulk GaN crystals [J].

Hanser, Drew ;

Tutor, Mike ;

Preble, Ed ;

Williams, Mark ;

Xu, Xueping ;

Tsvetkov, Denis ;

Liu, Lianghong .

JOURNAL OF CRYSTAL GROWTH, 2007, 305 (02) :372-376

[6] A GaN bulk crystal with improved structural quality grown by the ammonothermal method [J].

Hashimoto, Tadao ;

Wu, Feng ;

Speck, James S. ;

Nakamura, Shuji .

NATURE MATERIALS, 2007, 6 (08) :568-571

[7] Chemical mechanical polishing of GaN [J].

Hayashi, S. ;

Koga, T. ;

Goorsky, M. S. .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2008, 155 (02) :H113-H116

[8] Optimization of initial MOVPE growth of non-polar m- and a-plane GaN on Na flux grown LPE-GaN substrates [J].

Isobe, Yasuhiro ;

Iida, Daisuke ;

Sakakibara, Tatsuyuki ;

Iwaya, Motoaki ;

Takeuchi, Tetsuya ;

Kamiyama, Satoshi ;

Akasaki, Isamu ;

Amano, Hiroshi ;

Imade, Mamoru ;

Kitaoka, Yasuo ;

Mori, Yusuke .

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, 2011, 8 (7-8) :2095-2097

[9]

KASAI T, 2000, J SURF SCI SOC JPN, V21, P688

[10] Growth of a large GaN single crystal using the liquid phase epitaxy (LPE) technique [J].

Kawamura, F ;

Iwahashi, T ;

Omae, K ;

Morishita, M ;

Yoshimura, M ;

Mori, Y ;

Sasaki, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2003, 42 (1A-B) :L4-L6

← 1 2 3 4 →