A discretization scheme for an extended drift-diffusion model including trap-assisted phenomena

被引：9

作者：

Bosisio, F ^{[1
]}

Micheletti, S ^{[1
]}

Sacco, R ^{[1
]}

机构：

[1] Politecn Milan, Dipartimento Matemat F Brioschi, I-20133 Milan, Italy

来源：

JOURNAL OF COMPUTATIONAL PHYSICS | 2000年 / 159卷 / 02期

关键词：

semiconductors; mixed finite elements; Newton-Krylov methods;

D O I：

10.1006/jcph.2000.6428

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

An extended drift-diffusion model is considered to account for the kinetics of electrons trapped in defect states within a semiconductor material. A discretization scheme based on Newton-Krylov iterations and mixed finite volumes is then proposed and applied to the model, even in the presence of Schottky contacts (i.e., Robin-type boundary conditions). Numerical results concerning the simulation of an electrooptical device in several working conditions are presented last. (C) 2000 Academic Press.

引用

页码：197 / 212

页数：16

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