Filament poisoning at typical carbon nanotube deposition conditions by hot-filament CVD

被引:11
作者
Oliphant, C. J. [1 ,2 ]
Arendse, C. J. [1 ,2 ]
Malgas, G. F. [2 ]
Motaung, D. E. [1 ,2 ]
Muller, T. F. G. [1 ]
Halindintwali, S. [1 ]
Julies, B. A. [1 ]
Knoesen, D. [1 ]
机构
[1] Univ Western Cape, Dept Phys, ZA-7535 Bellville, South Africa
[2] CSIR Mat Sci & Mfg, Natl Ctr Nanostruct Mat, ZA-0001 Pretoria, South Africa
基金
新加坡国家研究基金会;
关键词
CHEMICAL-VAPOR-DEPOSITION; DIAMOND FILMS; THIN-FILMS; TUNGSTEN; CARBURIZATION; CARBIDE; TEMPERATURE; PRESSURE; SILICON; GROWTH;
D O I
10.1007/s10853-009-3341-y
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report on the poisoning of tungsten filaments during the hot-filament chemical vapour deposition process at typical carbon nanotube (CNT) deposition conditions and filament temperatures ranging from 1400 to 2000 A degrees C. The morphological and structural changes of the filaments were investigated using scanning electron microscopy and X-ray diffraction, respectively. Our results conclusively show that the W-filament is not stable during the carburization process and that both mono- and ditungsten-carbides form within the first 5 min. Cracks and graphitic microspheres form on the carbide layer during the first 15 min at the temperatures a parts per thousand yen1600 A degrees C. The microspheres subsequently coalesce to form a graphite layer, encapsulating a fully carburized filament at the temperature of 2000 A degrees C after 60 min, which inhibits the catalytic activity of the filament to produce atomic hydrogen. The structural changes of the filament also induce variations in its temperature, illustrating the instability of the filament during the deposition of CNTs.
引用
收藏
页码:2610 / 2616
页数:7
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