Influence of deposition parameters and post-deposition plasma treatments on the photoluminescence of polymorphous silicon carbon alloys

被引：13

作者：

Suendo, V.

Patriarche, G.

Cabarrocas, P. Roca i

机构：

[1] Ecole Polytech, CNRS, UMR 7647, Phys Interfaces & Couches Minces Lab, F-91128 Palaiseau, France

[2] CNRS, UPR20, Lab Photon & Nanostruct, F-91460 Marcoussis, France

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2006年 / 352卷 / 9-20期

关键词：

polymorphous silicon carbon alloys; photoluminescence; silicon nanocrystals; particle formation; hydrogen plasma treatment;

D O I：

10.1016/j.jnoncrysol.2005.12.037

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have studied the photoluminescence (PL) of a nanostructured material consisting of silicon nanocrystals embedded in an amorphous matrix that we call polymorphous silicon carbon (pm-Si1-xCx:H). The presence of silicon nanocrystals in the a-Si1-xCx:H matrix is confirmed by high resolution transmission electron microscopy (HRTEM) as well as by their PL emission features, in particular a strong room temperature emission and a broad spectrum, which are characteristic of silicon nanocrystals. Moreover, the PL intensity was found to be closely related with the number of nanocrystals in the film, which depends on the deposition conditions, in particular the RF power. Possible ways to enhance the PL efficiency and a model of the recombination routes are discussed. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：1357 / 1360

页数：4

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