Quantum-kinetic theory of hot luminescence from pulse-excited semiconductors

被引:0
作者
Hannewald, K [1 ]
Glutsch, S [1 ]
Bechstedt, F [1 ]
机构
[1] FSU Jena, IFTO, D-07743 Jena, Germany
来源
ULTRAFAST PHENOMENA IN SEMICONDUCTORS VI | 2002年 / 4643卷
关键词
semiconductors; electron-phonon interaction; excitons; photoluminescence; photoluminescence excitation spectroscopy;
D O I
10.1117/12.470409
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present a theory of time-and-energy-resolved photoluminescence (PL) from semiconductors excited by femto-second laser pulses. Our approach combines quantum kinetics of hot-carrier relaxation and quantum : theory of spontaneous emission, under consistent inclusion of Coulomb interaction. Model calculations show the transition from PL at the pump frequency towards excitonic PL within a few picoseconds. For intermediate, times, we predict hot luminescence to be a sensitive tool to study the electron-lattice interaction. Finally, we extend the theory to the description of photoluminescence excitation (PLE) experiments, and we reinvestigate from first principles the assumption of equivalence between PLE and absorption spectra.
引用
收藏
页码:92 / 102
页数:11
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