Performance of Ce-doped (La, Gd)2Si2O7 scintillator with an avalanche photodiode

被引:28
作者
Kurosawa, Shunsuke [1 ,2 ]
Shishido, Toetsu [1 ]
Suzuki, Akira [1 ]
Pejchal, Jan [1 ,3 ]
Yokota, Yuui [2 ]
Yoshikawa, Akira [1 ,2 ,4 ]
机构
[1] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan
[2] New Ind Creat Hatchery Ctr NICHe, Aoba Ku, Sendai, Miyagi 9808579, Japan
[3] AS CR, Inst Phys, Prague 16253, Czech Republic
[4] C&A Corp, Aoba Ku, Sendai, Miyagi 9808577, Japan
基金
日本科学技术振兴机构; 日本学术振兴会;
关键词
Scintillator; Ce-doped; (La; Gd)(2)Si2O7; Photon non-proportional response; Temperature dependence; APD; ENERGY-RESOLUTION; INORGANIC SCINTILLATORS; NON-PROPORTIONALITY; CRYSTALS; LUTETIUM; GSO; NONPROPORTIONALITY; EFFICIENT; GROWTH; ARRAYS;
D O I
10.1016/j.nima.2014.01.018
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Scintillation properties of Ce-doped (La, Gd)(2)Si2O7 (Ce:La-GPS) crystal were measured with Si avalanche photodiode (APD, Hamamatsu S8664-55). Since Ce:La-GPS is a novel scintillator, its scintillation properties have been evaluated using the APD for the first time. This crystal grown by floating zone method had a good light output of 41,000 +/- 1000 photons/MeV and FWHM energy resolution at 662 keV was 4.4 +/- 0.1% at 23.0 +/- 0.2 degrees C. The photon non-proportional response (PNR) of Ce:La-GPS was approximately 65% at 32 keV, where light output at 662 key was normalized to 100%. Moreover, the temperature dependence of the light outputs was determined to be approximately 0.15%/degrees C from 10 to 30 degrees C. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码:30 / 34
页数:5
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