Low-noise high-temperature SOI analog circuits

被引：0

作者：

Dessard, V ^{[1
]}

Iniguez, B ^{[1
]}

Adriaensen, S ^{[1
]}

Flandre, D ^{[1
]}

机构：

[1] Univ Catholique Louvain, B-1348 Louvain, Belgium

来源：

PROGRESS IN SOI STRUCTURES AND DEVICES OPERATING AT EXTREME CONDITIONS | 2002年 / 58卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper deals with SOI n-MOS low frequency noise measurements, analysis and modeling from room temperature up to 250degreesC. Based on this, general considerations about low-noise high-temperature analog circuits are discussed. In the second part of the paper, we introduce a new low-noise high-temperature fully-differential instrumentation preamplifier implemented on a thin-film fully-depleted SOI process.

引用

页码：189 / 209

页数：21

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