An Integrated a-IGZO UHF Energy Harvester for Passive RFID Tags

被引：45

作者：

Chasin, Adrian ^{[1
,2
]}

Volskiy, Vladimir ^{[1
]}

Libois, Michael ^{[2
]}

Myny, Kris ^{[2
]}

Nag, Manoj ^{[1
,2
]}

Rockele, Maarten ^{[1
,2
]}

Vandenbosch, Guy A. E. ^{[1
]}

Genoe, Jan ^{[2
]}

Gielen, Georges ^{[1
]}

Heremans, Paul ^{[1
,2
]}

机构：

[1] Univ Leuven, Fac Elect Engn, B-3000 Leuven, Belgium

[2] IMEC, B-3001 Leuven, Belgium

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2014年 / 61卷 / 09期

关键词：

Amorphous indium-gallium-zinc oxide (a-IGZO); radio-frequency identification (RFID); Schottky diode; thin-film electronics; wireless power transmission;

D O I：

10.1109/TED.2014.2340462

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present an ultrahigh frequency energy harvester based on low temperature processed a-IGZO (amorphous indium-gallium-zinc oxide) semiconductor on a glass substrate. The harvester is composed of a dipole antenna, matching network, and a double half-wave rectifier and is capable of delivering more than 1 V-dc at a distance of 2 m from the transmitter antenna. In the proposed wireless system, this sensitivity corresponds to 2.75-m distance harvesting at 4-W (36 dBm) emitted power from a base station, which is within EPC regulations. The main element of the rectifier is the high-performance a-IGZO Schottky diode on glass, with a rectification ratio of 10(7) at +/- 1 V, a low threshold voltage of 0.6 V and a cutoff frequency of 3 GHz at 0 V bias.

引用

页码：3289 / 3295

页数：7

共 13 条

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