A novel transistor model for simulating avalanche-breakdown effects in Si bipolar circuits

被引：55

作者：

Rickelt, M ^{[1
]}

Rein, HM ^{[1
]}

机构：

[1] Ruhr Univ Bochum, D-44780 Bochum, Germany

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2002年 / 37卷 / 09期

关键词：

bipolar transistors; breakdown voltage; impact ionization; transistor model;

D O I：

10.1109/JSSC.2002.801197

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A physics-based scalable transistor model is described which allows accurate consideration of avalanche-breakdown effects in bipolar circuit simulation. The three-dimensional model consists of six lumped transistor elements, which are connected via elements of the base and emitter-contact resistance. Analytical relations are given to calculate the elements of this six-transistor model (6TM) for arbitrary emitter dimensions from measured area- and length-specific transistor parameters. As a core of the transistor elements, all kinds of conventional transistor models can be used provided an adequate avalanche current source is implemented between the internal collector and base nodes. The validity of this 6TM has been verified under dc and fast transient conditions by simulations and measurements.

引用

页码：1184 / 1197

页数：14

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