X-ray measurements of the strain and shape of dielectric/metallic wrap-gated InAs nanowires

被引：13

作者：

Eymery, J. ^{[1
]}

Favre-Nicolin, V. ^{[1
]}

Froberg, L. ^{[2
]}

Samuelson, L. ^{[2
]}

机构：

[1] CEA, INAC, SP2M, F-38054 Grenoble 9, France

[2] Lund Univ, S-22100 Lund, Sweden

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 13期

关键词：

chromium; coatings; deformation; dielectric materials; hafnium compounds; III-V semiconductors; indium compounds; nanotechnology; nanowires; semiconductor heterojunctions; X-ray diffraction;

D O I：

10.1063/1.3114369

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Wrap-gate (111) InAs nanowires (NWs) were studied after HfO2 dielectric coating and Cr metallic deposition by a combination of grazing incidence x-ray techniques. In-plane and out-of-plane x-ray diffraction (crystal truncation rod analysis) allow determining the strain tensor. The longitudinal contraction, increasing with HfO2 and Cr deposition, is significantly larger than the radial dilatation. For the Cr coating, the contraction along the growth axis is quite large (-0.95%), and the longitudinal/radial deformation ratio is >10, which may play a role on the NW transport properties. Small angle x-ray scattering shows a smoothening of the initial hexagonal bare InAs NW shape and gives the respective core/shell thicknesses, which are compared to flat surface values.

引用

页数：3

共 12 条

[1] Vertical wrap-gated nanowire transistors [J].