Temperature dependant electrical properties of formyl-TIPPCu(II)/p-Si heterojunction diode

被引：1

作者：

Khan, Dil Nawaz ^{[1
,2
]}

Sayyad, Muhammad Hassan ^{[1
]}

Wahab, Fazal ^{[1
]}

Tahir, Muhammad ^{[1
,3
]}

Yaseen, Muhammad ^{[4
]}

Munawar, Munawar Ali ^{[5
]}

Ali, Mukhtar ^{[6
]}

机构：

[1] Ghulam Ishaq Khan Inst Engn Sci & Technol, Fac Engn Sci, Topi 23640, Kpk, Pakistan

[2] Govt Postgrad Coll, Dept Phys, Abbottabad, Kpk, Pakistan

[3] Abdul Wali Khan Univ, Dept Phys, Mardan 23200, Kpk, Pakistan

[4] Punjab Forens Sci Agcy, Lahore, Pakistan

[5] Univ Punjab, Inst Chem, Lahore, Pakistan

[6] Govt Coll Sci, Lahore, Pakistan

来源：

MODERN PHYSICS LETTERS B | 2014年 / 28卷 / 13期

关键词：

Electrical characterization; heterojunction; CURRENT-VOLTAGE CHARACTERISTICS;

D O I：

10.1142/S0217984914501000

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper reports the temperature dependent electrical characterization of formyl-TIPPCu(II)/p-Si heterojunction diode which was fabricated by growing thin films of formyl-TIPPCu(II) on the p-type silicon substrate by thermal sublimation technique. The variation in electrical characteristics of the fabricated devices has been systematically investigated as the function of temperature by using current-voltage (I-V) measurements in the temperature range 299-339 K. The diode parameters like ideality factor, zero bias barrier height and parasitic series resistance have been found to be strongly temperature dependant. The zero bias barrier height increases while ideality factor and series resistance decreases with increasing temperature.

引用

页数：10

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