Formation of boron heavily-doped nanolayer in silicon by powerful ion irradiation

被引：5

作者：

Kokhanenko, A ^{[1
]}

Korotaev, A ^{[1
]}

Voitsekhovskii, A ^{[1
]}

Grushin, I ^{[1
]}

Opekunov, M ^{[1
]}

Remnev, G ^{[1
]}

机构：

[1] Tomsk State Univ, Dept Radiophys, Tomsk 634050, Russia

来源：

MICROELECTRONIC DEVICE TECHNOLOGY III | 1999年 / 3881卷

关键词：

Shottky barrier; recoil implantation; metal-semiconductor interface; high power ion beams; boron doping in silicon;

D O I：

10.1117/12.360564

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

An opportunity of forming heavily doped boron layers in silicon is analyzed in this work for variation of potential barrier height on the metal-semiconductor interfaces. Implantation of boron atoms in silicon samples was made by recoil method, inducing Al ion beams bombardment with current density 4-10 A/cm(2) and 30-150 keV energy. An analysis of getting structures by SIMS and calculation of their electric parameters show the opportunity of conducting layers formation with a thickness of 10 nm and carrier concentration more than 10(18) cm(-3).

引用

页码：274 / 283

页数：10

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