CO sensing characteristics of reactively sputtered SnO2 thin films prepared under different oxygen partial pressure values

被引：26

作者：

Micocci, G

Serra, A

Siciliano, P

Tepore, A

AliAdib, Z

机构：

[1] CNR,IME,IST STUDIO NUOVI MAT ELETTRON,I-73100 LECCE,ITALY

[2] UNIV MANCHESTER,DEPT MATH,MANCHESTER M13 9PL,LANCS,ENGLAND

来源：

VACUUM | 1996年 / 47卷 / 10期

关键词：

D O I：

10.1016/0042-207X(96)00157-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin films of tin oxide (SnO2) have been deposited by means of RF sputtering from a pure SnO2 target onto alumina substrates in an Ar/O-2 mixture. Different oxygen contents in the sputtering atmosphere were used, in order to achieve the best thin films properties for CO detection. Films with the best sensitivity were obtained with 30% oxygen. The optimum operating temperature of the realized devices was about 270 degrees C. Copyright (C) 1996 Elsevier Science Ltd

引用

页码：1175 / 1177

页数：3

共 7 条

[1]

ADVANI G, 1990, J ELECTRON MATER, V9, P29

[2] ELECTRICAL TRANSPORT-PROPERTIES OF THIN POLYCRYSTALLINE SNO2 FILM SENSORS [J].