Amorphous effect on the advancing of wide-range absorption and structural-phase transition in γ-In2Se3 polycrystalline layers

被引:41
作者
Ho, Ching-Hwa [1 ,2 ,3 ]
机构
[1] Natl Taiwan Univ Sci & Technol, Grad Inst Appl Sci & Technol, Taipei 106, Taiwan
[2] Natl Taiwan Univ Sci & Technol, Grad Inst Electroopt Engn, Taipei 106, Taiwan
[3] Natl Taiwan Univ Sci & Technol, Dept Elect & Comp Engn, Taipei 106, Taiwan
来源
SCIENTIFIC REPORTS | 2014年 / 4卷
关键词
PHOTOELECTRIC-CONVERSION; OPTICAL-PROPERTIES; GROWTH; ALPHA-IN2SE3; FILMS;
D O I
10.1038/srep04764
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
The exploitation of potential functions in material is crucial in materials research. In this study, we demonstrate a III-VI chalcogenide, polycrystalline gamma-In2Se3, which simultaneously possesses the capabilities of thickness-dependent optical gaps and wide-energy-range absorption existed in the polycrystalline layers of gamma-In2Se3. Transmission electron microscopy and Raman measurement show a lot of gamma-phase nanocrystals contained in the disordered and polycrystalline state of the chalcogenide with medium-range order (MRO). The MRO effects on the gamma-In2Se3 layers show thickness-dependent absorption-edge shift and thickness-dependent resistivities. The amorphous effect of MRO also renders a structural-phase transition of gamma -> alpha occurred inside the gamma-In2Se3 layer with a heat treatment of about 700 degrees C. Photo-voltage-current (Photo V-I) measurements of different-thickness gamma-In2Se3 layers propose a wide-energy-range photoelectric conversion unit ranging from visible to ultraviolet (UV) may be achieved by stacking gamma-In2Se3 layers in a staircase form containing dissimilar optical gaps.
引用
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页数:8
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