InxGa1-xAs/GaAs-based Intermediate Band Solar Cell: Effects of Quantum Dots

被引：0

作者：

Amin, Sayeda Anika ^{[1
]}

Hasan, Md Tanvir ^{[1
]}

Islam, Muhammad Shaffatul ^{[2
]}

机构：

[1] AIUB, Dept Elect & Elect Engn, Dhaka, Bangladesh

[2] World Univ Bangladesh, Dept Elect & Elect Engn, Dhaka, Bangladesh

来源：

PROCEEDINGS OF THE 2016 IEEE REGION 10 CONFERENCE (TENCON) | 2016年

关键词：

InxGa1-xAs/GaAs; intermediate hand; quantum dots; EFFICIENCY;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes the influence of In0.53Ga0.47As/GaAs quantum dots (QDs) in the intermediate hand solar cell (IBSC). The In0.53Ga0.49As QDs have been inserted in the intrinsic region of a p-i-n GaAs solar cell in order to increase the absorption range as well as cell efficiency. The cell structure has been optimized with respect to the horizontal and vertical dot-to-dot spacing. The optimum efficiency is enhanced front 27.1% to 32.09% for increasing the number of QD layers.

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收藏

页码：2753 / 2756

页数：4

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