Achieving high energy efficiency and energy density in PbHfO3-based antiferroelectric ceramics

被引:55
作者
Chao, Wenna [1 ,2 ,3 ]
Yang, Tongqing [1 ]
Li, Yongxiang [2 ]
机构
[1] Tongji Univ, Key Lab Adv Civil Engn Mat, Funct Mat Res Lab, Minist Educ,Sch Mat Sci & Engn, 4800 Caoan Rd, Shanghai 201804, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R China
[3] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
基金
中国国家自然科学基金;
关键词
STORAGE DENSITY; THICK-FILMS; PERFORMANCE; STABILITY; PBZRO3;
D O I
10.1039/d0tc04617e
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Antiferroelectric materials with higher electric field, reduced energy dissipation and lower remanent polarization generally display excellent energy storage performance. In this work, Pb0.98La0.02(HfxSn1-x)(0.995)O-3 lead-based antiferroelectric ceramics were synthesized by a rolling process. It is revealed that the inhomogeneous distribution of Sn4+ can disorder the local structure, which is responsible for the slim hysteresis loops. Superior energy storage performance (recoverable energy density W-rec = 7.63 J cm(-3), eta = 94% at an electric field of 380 kV cm(-1)) with excellent thermal stability (20-120 degrees C) were achieved in Pb0.98La0.02(Hf0.45Sn0.55)(0.995)O-3 ceramic. In addition, it also shows a notable discharge current density of 1430 A cm(-2) and high level of power density of 193 MW cm(-3) with a fast discharge speed (112 ns discharge period), which greatly promote the application of this series of component materials in energy storage applications.
引用
收藏
页码:17016 / 17024
页数:9
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