Noise and radiation damage in silicon photomultipliers exposed to electromagnetic and hadronic radiation

被引:23
作者
Majos, S. Sanchez [1 ]
Achenbach, P. [1 ]
Gayoso, C. Ayerbe [1 ]
Bernauer, J. C. [1 ]
Boehm, R. [1 ]
Distler, M. O. [1 ]
de la Paz, M. Gomez Rodriguez [1 ]
Merkel, H. [1 ]
Mueller, U. [1 ]
Nungesser, L. [1 ]
Pochodzalla, J. [1 ]
Schlimme, B. S. [1 ]
Walcher, Th. [1 ]
Weinriefer, M. [1 ]
Yoon, C. J. [1 ]
机构
[1] Johannes Gutenberg Univ Mainz, Inst Kernphys, D-6500 Mainz, Germany
关键词
Silicon photomultiplier; Tracking and position-sensitive detectors; Particle detector design; Radiation damage;
D O I
10.1016/j.nima.2009.01.176
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
For the electron arm tracking system in the KAOS spectrometer at the Mainz Microtron MAMI a detector based on 2 m long scintillating fibres read out by silicon photomultipliers (SiPM) is planned. Because of the detector's close proximity to the intense electron beam a study of noise and radiation damage in SiPM has been performed. A sample of devices was exposed directly to a 14 MeV electron beam and to a mixed radiation field in the experimental area. First noticeable effects are a large increase in the dark count rate and a severe loss of the gain uniformity. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:506 / 510
页数:5
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