P-InAsSbP/n0-InAs/n+-InAs Photodiodes for Operation at Moderate Cooling (150-220 K)

被引：6

作者：

Brunkov, P. N. ^{[1
,2
]}

Il'inskaya, N. D. ^{[1
]}

Karandashev, S. A. ^{[1
]}

Latnikova, N. M. ^{[3
]}

Lavrov, A. A. ^{[1
]}

Matveev, B. A. ^{[1
]}

Petrov, A. S. ^{[4
]}

Remennyi, M. A. ^{[1
]}

Sevostyanov, E. N. ^{[3
]}

Stus, N. M. ^{[1
]}

机构：

[1] Ioffe Inst, St Petersburg 194021, Russia

[2] Natl Res Univ Informat Technol Mech & Opt ITMO, St Petersburg 197101, Russia

[3] LETI Ulyanov Lenin St Petersburg Electrotech Univ, St Petersburg 197376, Russia

[4] Electron Natl Res Inst, St Petersburg 194223, Russia

来源：

SEMICONDUCTORS | 2014年 / 48卷 / 10期

关键词：

INAS;

D O I：

10.1134/S1063782614100066

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

InAs single hetero structure photodiodes were considered as alternatives to cooled CdHgTe-based detectors sensitive to radiation around 3 mu m spectral region in a wide temperature range 77-300 K. Estimations of detectivity as well as p-n junction position in InAs heterostructures have been obtained via photo-electrical and AFM measurements.

引用

页码：1359 / 1362

页数：4

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