Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films

被引:31
作者
Alcala, Ruben [1 ,4 ]
Richter, Claudia [1 ]
Materano, Monica [1 ]
Lomenzo, Patrick D. [1 ]
Zhou, Chuanzhen [2 ]
Jones, Jacob L. [3 ]
Mikolajick, Thomas [1 ,4 ]
Schroeder, Uwe [1 ]
机构
[1] NaMLab gGmbH, Noethnitzer Str 64 a, D-01187 Dresden, Germany
[2] North Carolina State Univ, Analyt Instrumentat Facil, Raleigh, NC USA
[3] North Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC USA
[4] Tech Univ Dresden, Chair Nanoelect, Noethnitzer Str 64, D-01187 Dresden, Germany
基金
美国国家科学基金会;
关键词
ALD; PEALD; hafnium oxide; zirconium oxide; ferroelectric; ozone; oxygen plasma; ATOMIC LAYER DEPOSITION; SURFACE-REACTION MECHANISMS; TETRAGONAL ZIRCONIA; THIN-FILMS; OZONE;
D O I
10.1088/1361-6463/abbc98
中图分类号
O59 [应用物理学];
学科分类号
摘要
Hafnium oxide (HfO2), zirconium oxide (ZrO2), and the solid-solution (Hf1-xZrxO2) system continue to be some of the most relevant ferroelectric materials, in particular, for their promising application in CMOS integrated ferroelectric memories. Recent understanding of the influence of oxygen supplied during film deposition on the structural phase formation process in Hf1-xZrxO2 films has drawn attention to a commonly overlooked parameter for tuning ferroelectric and electrical properties of these films. In this paper, a comparison of O-3 and O-2 plasma used as the oxygen source in an atomic layer deposition process for Hf1-xZrxO2 films within the full compositional range is discussed. A combination of structural and electrical characterization methods grant insight on the influence of each of the oxygen sources on the crystalline phase formation during deposition of Hf1-xZrxO2 films. These observations are then correlated to the material's behavior regarding its ferroelectric and electrical properties; mainly, dielectric constant, ferroelectric remanent polarization, and number of electric field cycles to breakdown.
引用
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页数:12
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