SNR prediction model of an In0.53Ga0.47As interdigitated lateral p-i-n photodiode

The In0.53Ga0.47As interdigitated lateral p-i-n photodiode (ILPP) is a a cheap and affordable device to meet growing demands of optical communication networks operating at speeds below 10 Gbps. A ILPP model utilizing In0.53Ga0.47As as the absorbing layer was developed and optimized statistically using fractional factorial design (FFD) methodology. Seven model factors were investigated and a new analytical equation was developed to predict the signal-to-noise (SNR) ratio of ILPP devices as a function of design factors. The analytical equation was used to predict SNR values for experimentally developed devices from the literature.