SNR prediction model of an In0.53Ga0.47As interdigitated lateral p-i-n photodiode

被引：1
|
作者：
Menon, P. Susthitha [1 ]
Kandiah, Kumarajah [2 ]
Shaari, Sahbudin [1 ]
机构：
[1] Univ Kebangsaan Malaysia, IMEN, PTL, Bangi 43600, Malaysia
[2] Univ Kebangsaan Malaysia, Fac Engn, Dept Elect Elect & Syst Engn, Bangi 43600, Malaysia
来源：
ICSE: 2008 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS | 2008年
关键词：
D O I：
10.1109/SMELEC.2008.4770326
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The In0.53Ga0.47As interdigitated lateral p-i-n photodiode (ILPP) is a a cheap and affordable device to meet growing demands of optical communication networks operating at speeds below 10 Gbps. A ILPP model utilizing In0.53Ga0.47As as the absorbing layer was developed and optimized statistically using fractional factorial design (FFD) methodology. Seven model factors were investigated and a new analytical equation was developed to predict the signal-to-noise (SNR) ratio of ILPP devices as a function of design factors. The analytical equation was used to predict SNR values for experimentally developed devices from the literature.
引用
收藏
页码：292 / +
页数：2
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