Numerical analysis of LEC growth of GaAs with an axial magnetic field

被引：12

作者：

Li, MW ^{[1
]}

Hu, WR

Chen, NH

Zeng, DL

Tang, ZM

机构：

[1] Chongqing Univ, Inst Power Engn, Chongqing 400044, Peoples R China

[2] Chinese Acad Sci, Inst Mech, Beijing 100083, Peoples R China

[3] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China

来源：

INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER | 2002年 / 45卷 / 13期

关键词：

liquid encapsulant Czochralski (LEC); growth of GaAs; magnetic field finite-element method; boron oxide;

D O I：

10.1016/S0017-9310(01)00355-6

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

A set of numerical analyses for momentum and heat transfer For a 3 in. (0.075 m) diameter Liquid Encapsulant Czochralski (LEC) growth of single-crystal GaAs with or without all axial magnetic field was carried Out using the finite-element method. The analyses assume a pseudosteady axisymmetric state with laminar floats. Convective and conductive heat transfers. radiative heat transfer between diffuse surfaces and the Navier-Stokes equations for both melt and encapsulant and electric current stream function equations Cor melt and crystal Lire considered together and solved simultaneously. The effect of the thickness of encapsulant. the imposed magnetic field strength as well as the rotation rate of crystal and crucible on the flow and heat transfer were investigated. (C) 2002 Published by Elsevier Science Ltd.

引用

页码：2843 / 2851

页数：9

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