Silicon Carbide Vertical JFET Operating at High Temperature

被引：3

作者：

Vassilevski, Konstantin ^{[1
]}

Hilton, Keith P. ^{[2
]}

Wright, Nicholas ^{[1
]}

Uren, Michael ^{[2
]}

Munday, Alison ^{[2
]}

Nikitina, Irina ^{[1
]}

Hydes, Alan ^{[2
]}

Horsfall, Alton ^{[1
]}

Johnson, C. Mark ^{[3
]}

机构：

[1] Newcastle Univ, Sch Elect Elect & Comp Engn, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England

[2] QinetiQ Ltd, Malvern WR14 3PS, Worcs, England

[3] Univ Nottingham, Sch Elect & Elect Engn, Nottingham NG7 2RD, England

来源：

SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2 | 2009年 / 600-603卷

基金：

英国工程与自然科学研究理事会;

关键词：

VJFET; TI-VJFET; 4H-SiC; Implantation; High current density; High temperature electronics; OFF 4H-SIC VJFET; DESIGN; FABRICATION;

D O I：

10.4028/www.scientific.net/MSF.600-603.1063

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Trenched and implanted vertical JFETs (TI-VJFETs) with blocking voltages of 700 V were fabricated on commercial 4H-SiC epitaxial wafers. Vertical p(+)-n junctions were formed by aluminium implantation in sidewalls of strip-like mesa structures. Normally-on 4H-SiC TI-VJFETs had specific on-state resistance (RON-S) of 8 m Omega.cm(2) measured at room temperature. These devices operated reversibly at a current density of 100 A/cm(2) whilst placed on a hot stage at temperature of 500 degrees C and without any protective atmosphere. The change of RON-S with temperature rising from 20 to 500 degrees C followed a power law (similar to T-2.4) which is close to the temperature dependence of electron mobility in 4H-SiC.

引用

页码：1063 / +

页数：2

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