Structure and NH3 sensing properties of SnO thin film deposited by RF magnetron sputtering

被引：52

作者：

Hien, Vu Xuan ^{[1
]}

Lee, Joon-Hyung ^{[1
]}

Kim, Jeong-Joo ^{[1
]}

Heo, Young-Woo ^{[1
]}

机构：

[1] Kyungpook Natl Univ, Sch Mat Sci & Engn, Taegu 702701, South Korea

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2014年 / 194卷

基金：

新加坡国家研究基金会;

关键词：

Gas sensor; SnO thin film; Sputtering; p-Type semiconductor; TIN OXIDE; METAL-OXIDES; GAS SENSORS; SURFACE; CATALYSIS; HUMIDITY; OXYGEN; ESCA;

D O I：

10.1016/j.snb.2013.12.086

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

SnO thin films, 100 nm in thickness, were deposited on glass substrates by RF magnetron sputtering. A structure of SnO2/SnO, where few nanometers of SnO2 were determined on the SnO thin film by X-ray photoelectron spectroscopy. In addition, XPS depth profile analysis of the pristine and heat treated thin films was introduced. The electrical behavior of the as-sputtered films during heat treatment in air and nitrogen was recorded to investigate the working conditions for the SnO sensor. Subsequently, the NH3 sensing properties of the SnO sensor at operating temperatures of 50-200 degrees C were examined, in which the p-type semiconducting sensing properties of the thin film were noted. The sensor shows good sensitivity and repeatability to NH3 vapor. Finally, a sensing mechanism was proposed and discussed. (C) 2014 Elsevier B. V. All rights reserved.

引用

页码：134 / 141

页数：8

共 27 条

[1] QUANTITATIVE USE OF ANGULAR VARIATION TECHNIQUE IN STUDIES OF TIN BY X-RAY PHOTOELECTRON-SPECTROSCOPY [J].